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| Preliminary data SPD07N20 SPU07N20 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V 200 V ID 7A 7A RDS(on) 0.4 0.4 Package Ordering Code SPD07N20 SPU07N20 P-TO252 P-TO251 C67078-S...-. - .. C67078-S...-. - .. Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 28 C ID A 7 Pulsed drain current TC = 25 C IDpuls 28 EAS Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 L = 4.9 mH, Tj = 25 C mJ 120 VGS Ptot Gate source voltage Power dissipation TC = 25 C 20 40 V W Operating temperature Storage temperature Thermal resistance, junction - case Thermal resistance, junction - ambient (PCB mount)** Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA RthJA -55 ... + 150 -55 ... + 150 C 3.1 50 100 55 / 150 / 56 K/W ** when mounted on 1 " square PCB ( FR4 );for recommended footprint Semiconductor Group 1 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 200 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 200 V, V GS = 0 V, Tj = 25 C V DS = 200 V, V GS = 0 V, Tj = 125 C IGSS 0.1 10 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 4.5 A 0.3 0.4 Semiconductor Group 2 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 4.5 A gfs S 3 4.2 pF 400 530 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 85 130 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 45 70 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tr 10 15 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 td(off) 40 60 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 tf 55 75 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RG = 50 - 30 40 Semiconductor Group 3 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 C IS A 7 Inverse diode direct current,pulsed TC = 25 C ISM V SD - 28 V Inverse diode forward voltage V GS = 0 V, IF = 14 A trr 1.3 1.7 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/s Qrr 200 C Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/s - 0.6 - Semiconductor Group 4 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 7.5 A 45 W 6.5 Ptot 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160 ID 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 A ID t = 22.0s p K/W ZthJC /I D 10 0 R DS (o n) =V DS 10 1 100 s 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 10 0 10 1 10 2 V VDS 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp Semiconductor Group 5 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 16 Ptot = 40W l kj i h g VGS [V] Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 1.3 1.1 RDS (on) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 V 11 0 fa 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 a b c d e A ID 12 b c 10 d e e f 8 g dh 6 c i j f h j k VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 k 10.0 l 20.0 g i 4 b 2 a 0 0 2 4 6 8 2 4 6 8 10 A 14 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 13 A 11 I D parameter: tp = 80 s, V DS2 x ID x RDS(on)max 6.0 S 5.0 g fs 10 9 8 4.5 4.0 3.5 7 3.0 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V VGS 2.5 2.0 1.5 1.0 0.5 0.0 10 0 2 4 6 8 A ID 12 Semiconductor Group 6 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 4.5 A, VGS = 10 V 1.9 Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 VGS(th) 3.6 3.2 typ 98% 1.6 RDS (on) 1.4 1.2 1.0 0.8 98% 0.6 typ 0.4 2.8 2.4 2.0 1.6 1.2 0.8 2% 0.2 0.0 -60 -20 20 60 100 C 160 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 C oss 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Avalanche energy EAS = (Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 , L = 4.9 mH 130 mJ 110 EAS 100 90 80 Drain-source breakdown voltage V(BR)DSS = (Tj) 240 V 230 V(BR)DSS 225 220 215 70 210 60 50 40 30 20 10 0 20 40 60 80 100 120 C 160 205 200 195 190 185 180 -60 -20 20 60 100 C 160 Tj Tj Semiconductor Group 8 23/Jan/1998 Preliminary data SPD07N20 SPU07N20 Package Outlines P-TO252 Dimension in mm P-TO251 Dimension in mm Semiconductor Group 9 23/Jan/1998 |
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